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6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

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Shenzhen A.N.G Technology Co., Ltd

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6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

Brand Name : ANG

Model Number : ANG-H6

Certification : ISO

Place of Origin : Guangdong, China

MOQ : 100

Price : Depend on size and quantity

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 500,000pcs per month

Delivery Time : 8~10 working days

Packaging Details : 1pc per box

Mpd : <2cm-2

Grade : Production Grade

Resistivity : 0.015-0.1 Ohm.Cm

Specification : 2inch/4inch/6inch

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6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

SiC(Silicon Carbide) Wafer

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the
important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power
LEDs.

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide
single crystal (sic) substrates wafers

Specification

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

4H-N 4 inch diameter Silicon Carbide (SiC) Substrate Specification

2 inch diameter Silicon Carbide (SiC) Substrate Specification

Grade	Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter	100. mm±0.2 mm or other customized size
Thickness	1000±25 um Or other customized thickness
Wafer Orientation	Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density	≤0 cm-2	≤2 cm-2	≤5 cm-2	≤30 cm-2
Resistivity 4H-N	0.015~0.028 Ω•cm
Resistivity 4/6H-SI	≥1E7 Ω·cm
Primary Flat	{10-10}±5.0° or round shape
Primary Flat Length	18.5 mm±2.0 mm or round shape
Secondary Flat Length	10.0mm±2.0 mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion	1 mm
TTV/Bow /Warp	≤10μm /≤10μm /≤15μm
Roughness	Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light	None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light	Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%
Polytype Areas by high intensity light	None		Cumulative area ≤2%	Cumulative area ≤5%
Scratches by high intensity light	3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length
edge chip	None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

Common Size

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

Application

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

Package

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer Images

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